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Extra info for Advances in Solid-State Circuits Technologies
As a result, the retention time of photodiode was measured as longer than 45 s. That retention time is much longer than that of current DRAMs. Consequently, the storage time is sufficient for the implementation of single instruction set computers. 7 pJ. That measurement demonstrates that nanosecondorder configuration is possible. 5. Conclusion This chapter has introduced and explained important concepts related to single instruction set computers. Such single-instruction set computers constitute an acceleration method used with microprocessor operations.
The schematic of this method is shown in Fig. 1. Considering that transistors M1, M2 operate at triode region, M3, M4 are biased at saturation region, channel length modulation, body effect, and other second-order effects are ignored, the drain current of M1 and M2 is given by ⎡ V2 ⎤ I D = β ⎢(VGS − VT )VDS − DS ⎥ 2 ⎦ ⎣ (1) 27 Transconductor where β =μnCOX(W/L), VGS is the gate-to-source voltage, VT is the threshold voltage, and VDS is the drain-to-source voltage. If the two amplifiers in Fig. 1 are ideal amplifiers, then VDS 1 = VDS 2 = VC (2) Fig.
A, Oct. 2004, Institute of Electrical and Electronics Engineers, Piscataway 44 Advances in Solid State Circuits Technologies Kuo K. C. & Leuciuc A. (2001). 48, No. 10, (Oct. 2001) pp. 937-943, ISSN 0098-4094 Krummenacher F. & Joehl N. (2004). A 4-MHz CMOS continuous-time filter with on-chip automatic tuning, IEEE Journal of Solid-State Circuits, Vol. 23, No. 6, (Jun 2004) pp. ; R. G. Carvajal R. ; Lopez-Martin A. & Carlosena A. (2004). A novel low-voltage low-power class-AB linear transconductor, IEEE Proceedings of International Sympoisum of Circuits and Systems, Vol.